FDP2614

FDP2614 — N-Channel PowerTrench® MOSFET October 2013 FDP2614 N-Channel PowerTrench® MOSFET 200 V, 62 A, 27 mΩ Features RDS(on) = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A Fast Switching Speed Low Gate Charge High Performance Trench technology for Extremely Low RDS(on) High Power and Current Handing Capability RoHS Compliant General Description This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications Consumer Appliances Synchronous Rectification Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies D GDS TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDS VGS ID IDM EAS dv/dt PD Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 1) (Note 2) (Note 3) TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max. ©2007 Fairchild Semiconductor Corporation 1 FDP2614 Rev. C3 G S FDP2614 200 ± 30 62 39.3 see Figure 9 145 4.5 260 2.1 -55 ...