FDP16N50

FDP16N50 / FDPF16N50 500V N-Channel MOSFET February 2007 FDP16N50 / FDPF16N50 500V N-Channel MOSFET Features 16A, 500V, RDS(on) = 0.38Ω @VGS = 10 V Low gate charge ( typical 32 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability UniFET Description TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G G DS TO-220 FDP Series TO-220F GD S FDPF Series S www.DataSheet4U.com Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FDP16N50 500 16 9.6 64 ±30 780 16 20 4.5 200 1.59 FDPF16N50 16 * 9.6 64 Unit V A A A V mJ A mJ V/ns 52 0.41 -55 to +150 300 W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” fro...