FDP14N30

www.DataSheet4U.com FDP14N30 / FDPF14N30 300V N-Channel MOSFET FDP14N30 / FDPF14N30 300V N-Channel MOSFET Features 14A, 300V, RDS(on) = 0.29Ω @VGS = 10 V Low gate charge ( typical 18 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability UniFET Description February 2007 TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G G DS TO-220 FDP Series GD S TO-220F FDPF Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) FDP14N30 300 14 8.4 56 ±30 330 14 14 4.5 140 1.12 FDPF14N30 14 * 8.4 ∗ 56 ∗ Unit V A A A V mJ A mJ V/ns 35 0.28 -55 to +150 300 W W/°C °C °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/...