General Description
Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -0.8 A Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.7 A Very low RDS-on mid voltage P-channel silicon technology
optimised for low Qg
This product is optimised for fast switching ap...