FDMS5672 N-Channel UltraFET Trench® MOSFET
FDMS5672 N-Channel UltraFET Trench® MOSFET
60V, 22A, 11.5mΩ
March 2015
Features
General Description
Max rDS(on) = 11.5mΩ at VGS = 10V, ID = 10.6A Max rDS(on) = 16.5mΩ at VGS = 6V, ID = 8A Typ Qg = 32nC at VGS = 10V Low Miller Charge Optimized Efficiency at High Frequencies RoHS Compliant
UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total .
N-Channel MOSFET
FDMS5672 N-Channel UltraFET Trench® MOSFET
FDMS5672 N-Channel UltraFET Trench® MOSFET
60V, 22A, 11.5mΩ
March 2015
Features
General Description
Max rDS(on) = 11.5mΩ at VGS = 10V, ID = 10.6A Max rDS(on) = 16.5mΩ at VGS = 6V, ID = 8A Typ Qg = 32nC at VGS = 10V Low Miller Charge Optimized Efficiency at High Frequencies RoHS Compliant
UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
Application
DC - DC Conversion
Pin 1
S S SG
DD D D Power 56 (Bottom view)
D5 D6 D7 D8
4G 3S 2S 1S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted.
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous -Continuous -Continuous -Pulsed
TC = 25°C TC = 100°C TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 5) (Note 5) (Note 1a) (Note 4) (Note 3)
(Note 1a)
Ratings 60 ±20 65 39 10.6 176 337 78 2.5
-55 to +150
Units V V
A
mJ W °C
RθJC RθJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
1.6
(Note 1a)
50
°C/W
Device Marking FDMS5672
Device FDMS5672
Package Power 56
Reel Size 13’’
Tape Width 12mm
Quantity 3000 .