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Fairchild Semiconductor
Fairchild Semiconductor


FDMS3622S

MOSFET

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FDMS3622S PowerTrench® Power Stage

December 2011

FDMS3622S
PowerTrench® Power Stage

25V Asymmetric Dual N-Channel MOSFET

Features
Q1: N-Channel „ Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17.5 A „ Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16 A
Q2: N-Channel „ Max rDS(on) = 1.4 mΩ at VGS = 10 V, ID = 34 A „ Max rDS(on) = 1.6 mΩ at VGS = 4.5 V, ID = 32 A „ Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
„ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
„ RoHS Compliant

General Description
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.
Applications
„ Computing „ Communications „ General Purpose Point of Load „ Notebook VCORE


























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