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Fairchild Semiconductor
Fairchild Semiconductor


FDMS3604S

MOSFET

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FDMS3604S PowerTrench® Power Stage

FDMS3604S
PowerTrench® Power Stage

January 2015

Asymmetric Dual N-Channel MOSFET
Features
Q1: N-Channel „ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A
Q2: N-Channel „ Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 23 A „ Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 21 A „ Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
„ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
„ RoHS Compliant

General Description
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been designed to provide optimal power efficiency.
Applications
„ Computing „ Communications „ General Purpose Point of Load „ Notebook VCORE

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