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Fairchild Semiconductor
Fairchild Semiconductor


FDMS3604AS

MOSFET

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FDMS3604AS PowerTrench® Power Stage

FDMS3604AS
PowerTrench® Power Stage

September 2011

30 V Asymmetric Dual N-Channel MOSFET

Features

General Description

Q1: N-Channel „ Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A „ Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A
Q2: N-Channel „ Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 23 A „ Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 21 A „ Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
„ MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
„ RoHS Compliant

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.
Applications
„ Computing
„ Communications
„ General Purpose Point of Load
„ Notebook VCOR


























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