FDMC8878

FDMC8878 N-Channel Power Trench® MOSFET February 2007 FDMC8878 N-Channel Power Trench® MOSFET 30V, 16.5A, 14mΩ Features General Description „ Max rDS(on) = 14mΩ at VGS = 10V, ID = 9.6A „ Max rDS(on) = 17mΩ at VGS = 4.5V, ID = 8.7A „ Low Profile - 1mm max in Power 33 „ RoHS Compliant tm This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management applications. Application „ DC - DC Conversion Bottom Top 5 6 7 8 D 1 D D D D D 5 6 7 8 4 G 3 S 2 S 1 S www.DataSheet4U.com D S S S G 4 3 2 D Power 33 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed PD TJ, TSTG Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range TC = 25°C TA = 25°C (Note 1a) TC = 25°C TC = 25°C TA = 25°C (Note 1a) Ratings 30 ±20 16.5 38 9.6 60 31 2.1 -55 to +150 W °C A Units V V Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 4 60 °C/W Package Marking and Ordering Information Device Marking FDMC8878 Device FDMC8878 Package Power 33 Reel Size 7” Tape Width 8mm Quantity 3000 units ©2007 Fairchild Semiconductor Corporation FDMC8878 Rev.D 1 www.fairchildsemi.com FDMC8878 N-Channel Power Trench® MOSFET Electrical Characteristic...