FDMC8296 N-Channel Power Trench® MOSFET
FDMC8296
N-Channel Power Trench® MOSFET
30V, 18A, 8.0m:
June 2014
Features
General Description
Max rDS(on) = 8.0m: at VGS = 10V, ID = 12A Max rDS(on) = 13.0m: at VGS = 4.5V, ID = 10A High performance trench technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant
This N-Channel MOS...
