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Fairchild Semiconductor
Fairchild Semiconductor


FDMC8200S

MOSFET

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FDMC8200S Dual N-Channel PowerTrench® MOSFET

March 2011

FDMC8200S

Dual N-Channel PowerTrench® MOSFET
30 V, 10 mΩ, 20 mΩ

Features
Q1: N-Channel „ Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 6 A „ Max rDS(on) = 32 mΩ at VGS = 4.5 V, ID = 5 A
Q2: N-Channel „ Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 8.5 A „ Max rDS(on) = 13.5 mΩ at VGS = 4.5 V, ID = 7.2 A „ RoHS Compliant

General Description
This device includes two specialized N-Channel MOSFETs in a due power33(3mm X 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency.
Applications
„ Mobile Computing
„ Mobile Internet Devices
„ General Purpose Point of Load

Pin 1

Bottom
D1 D1 D1 G1 D1
D2/S1
S2 S2 S2 G2

Bottom

VIN VIN

GHSVIN

VIN SWITCH

NODE

GND GND GND GLS

5 Q2 6 7 8

4 3 2 1
Q1

Power33

MOSFET Maximum Ratings TC = 25°C unless o


























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