FDMC8200S Dual N-Channel PowerTrench® MOSFET
March 2011
FDMC8200S
Dual N-Channel PowerTrench® MOSFET
30 V, 10 mΩ, 20 ...
FDMC8200S Dual N-Channel PowerTrench®
MOSFET
March 2011
FDMC8200S
Dual N-Channel PowerTrench®
MOSFET
30 V, 10 mΩ, 20 mΩ
Features
Q1: N-Channel Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 6 A Max rDS(on) = 32 mΩ at VGS = 4.5 V, ID = 5 A
Q2: N-Channel Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 8.5 A Max rDS(on) = 13.5 mΩ at VGS = 4.5 V, ID = 7.2 A RoHS Compliant
General Description
This device includes two specialized N-Channel
MOSFETs in a due power33(3mm X 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control
MOSFET (Q1) and synchronous
MOSFET (Q2) have been designed to provide optimal power efficiency.
Applications
Mobile Computing
Mobile Internet Devices
General Purpose Point of Load
Pin 1
Bottom
D1 D1 D1 G1 D1
D2/S1
S2 S2 S2 G2
Bottom
VIN VIN
GHSVIN
VIN SWITCH
NODE
GND GND GND GLS
5 Q2 6 7 8
4 3 2 1
Q1
Power33
MOSFET Maximum Ratings TC = 25°C unless o...