MOSFET
Description
FDMC510P P-Channel PowerTrench® MOSFET
FDMC510P
P-Channel PowerTrench® MOSFET
-20 V, -18 A, 8.0 mΩ
Features
Max rDS(on) = 8.0 mΩ at VGS = -4.5 V, ID = -12 A Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -10 A Max rDS(on) = 13 mΩ at VGS = -1.8 V, ID = -9.3 A Max rDS(on) = 17 mΩ at VGS = -1.5 V, ID = -8.3 A High performance trench technology for extrem...
Fairchild Semiconductor
FDMC510P PDF File
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