FDFMA2P029Z

MOSFET – P-Channel, POWERTRENCH) Integrated with Schottky Diode -20 V, -3.1 A, 95 mW FDFMA2P029Z, FDFMA2P029Z-F106 General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra−portable applications. It features a MOSFET with very low on−state resistance and an independently connected low forward voltage schottky diode allows for minimum conduction losses. The MicroFET t 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Features MOSFET Max rDS(on) = 95 mW at VGS = –4.5 V, ID = –3.1 A Max rDS(on) = 141 mW at VGS = –2.5 V, ID = –2.5 A HBM ESD Protection Level > 2.5 kV (Note 1) Schottky VF < 0.37 V @ 500 mA Low Profile − 0.8 mm Maximum − In the New Package MicroFET 2x2 mm These Devices are Pb−Free and are RoHS Compliant NOTE: 1. The diode connected between the gate and source serves only protection against ESD. No gate overvoltage rating is implied. DATA SHEET www.onsemi.com VDS MAX −20 V MOSFET rDS(on) MAX 95 mW @ −4.5 V 141 mW @ −2.5 V ID MAX −3.1 A SCHOTTKY DIODE VRRM MAX VF MAX 20 V 0.37 V @ 500 mA IO MAX 2A Pin 1 C A NC D D C G S WDFN6 2x2, 0.65P MicroFET CASE 511DA MARKING DIAGRAM &Z&2&K P29 &Z = Assembly Plant Code &2 = 2−Digit Date Code &K = 2−Digits Lot Run Traceability Code P29 = Device Code PIN CONNECTIONS A1 NC 2 D3 6C 5G 4S ORDERING INFORMATION See detailed ordering and shippin...