FDFM2P110 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode
August 2005
FDFM2P110
Integrated P-Channel Power...
FDFM2P110 Integrated P-Channel PowerTrench®
MOSFET and Schottky Diode
August 2005
FDFM2P110
Integrated P-Channel PowerTrench®
MOSFET and Schottky Diode
General Description
FDFM2P110 combines the exceptional performance of Fairchild's PowerTrench
MOSFET technology with a very low forward
voltage drop Schottky barrier rectifier in a MicroFET package.
Applications
Buck Boost
Features
This device is designed specifically as a single package solution for Buck Boost. It features a fast switching, low gate charge
MOSFET with very low on-state resistance.
-3.5 A, -20 V RDS(ON) = 140mΩ @ VGS = -4.5 V
RDS(ON) = 200mΩ @ VGS = -2.5 V Low Profile - 0.8 mm maximun - in the new package
MicroFET 3x3 mm
PIN 1 A SG
A1
6A
C/D
S2
5S
G3
4D
TOP
MLP 3x3
AS D BOTTOM
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDSS VGSS
ID
VRRM IO
PD
Parameter Drain-Source
Voltage Gate-Source
Voltage Drain Current -Continuous
-Pulsed Schottky Repetitive Peak Reverse
voltage Schottky Average Forward Current Power dissipation (Steady State)
(Note 1a)
(Note 1a) (Note 1a) (Note 1b)
TJ, TSTG Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJA
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1b)
Package Marking and Ordering Information
Device Marking 2P110
Device FDFM2P110
Reel Size 7inch
Tape Width 12mm
©2005 Fairchild Semiconductor Corporation
1
Ratings -20 ±12 -3.5 -10 20 2 2 0.8
-55...