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FDD6780 Datasheet

Part Number FDD6780
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel Power Trench MOSFET
Datasheet FDD6780 DatasheetFDD6780 Datasheet (PDF)

FDD6780 N-Channel PowerTrench® MOSFET FDD6780 N-Channel PowerTrench® MOSFET 25 V, 30 A, 8.5 mΩ Features General Description June 2009 „ Max rDS(on) = 8.5 mΩ at VGS = 10 V, ID = 16.5 A „ Max rDS(on) = 12.5 mΩ at VGS = 4.5 V, ID = 13.0 A „ 100% UIL test „ RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rD.

  FDD6780   FDD6780






Part Number FDD6782A
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDD6780 DatasheetFDD6782A Datasheet (PDF)

FDD6782A N-Channel Power Trench® MOSFET January 2009 FDD6782A N-Channel PowerTrench® MOSFET 25 V, 10.5 mΩ Features „ Max rDS(on) = 10.5 mΩ at VGS = 10 V, ID = 14.9 A „ Max rDS(on) = 24.0 mΩ at VGS = 4.5 V, ID = 11.0 A „ 100% UIL test „ RoHS Compliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(.

  FDD6780   FDD6780







Part Number FDD6780A
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDD6780 DatasheetFDD6780A Datasheet (PDF)

FDD6780A / FDU6780A_F071 N-Channel Power Trench® MOSFET January 2009 FDD6780A / FDU6780A_F071 N-Channel PowerTrench® MOSFET 25 V, 8.6 mΩ Features „ Max rDS(on) = 8.6 mΩ at VGS = 10 V, ID = 16.4 A „ Max rDS(on) = 19.0 mΩ at VGS = 4.5 V, ID = 12.2 A „ 100% UIL test „ RoHS Compliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized.

  FDD6780   FDD6780







N-Channel Power Trench MOSFET

FDD6780 N-Channel PowerTrench® MOSFET FDD6780 N-Channel PowerTrench® MOSFET 25 V, 30 A, 8.5 mΩ Features General Description June 2009 „ Max rDS(on) = 8.5 mΩ at VGS = 10 V, ID = 16.5 A „ Max rDS(on) = 12.5 mΩ at VGS = 4.5 V, ID = 13.0 A „ 100% UIL test „ RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Applications „ Vcore DC-DC for Desktop Computers and Servers „ VRM for Intermediate Bus Architecture D G S D DTO-P-2A5K2 (TO-252) G S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) Ratings 25 ±20 30 49 16.5 70 40 33 3.7 -55 to +175 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1a) 4.5 40 °C/W Device Marking FDD6780 Device FDD6780 Package D-PAK (TO-252) Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units .


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