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Fairchild Semiconductor
Fairchild Semiconductor


FDD5N60NZ

MOSFET

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FDD5N60NZ — N-Channel UniFETTM II MOSFET

FDD5N60NZ
N-Channel UniFETTM II MOSFET
600 V, 4.0 A, 2 Ω
Features
• RDS(on) = 1.65 Ω (Typ.) @ VGS = 10 V, ID = 2.0 A • Low Gate Charge (Typ. 10 nC) • Low Crss (Typ. 5 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Imoroved Capability • RoHS Compliant
Applications
• LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply

November 2013
Description
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFETTM II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX 


























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