General Description
Max rDS(on) = 44mΩ at VGS = -10V, ID = -6.7A Max rDS(on) = 64mΩ at VGS = -4.5V, ID = -5.5A High performance trench technology for extremely low rDS(on) RoHS Compliant
November 2006
This P-Channel MOSFET has been produced...
FDD4243 PDF File
