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FDC610PZ

Fairchild Semiconductor
Part Number FDC610PZ
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 11, 2017
Detailed Description FDC610PZ P-Channel PowerTrench® MOSFET FDC610PZ P-Channel PowerTrench® MOSFET –30V, –4.9A, 42mΩ Features General Desc...
Datasheet PDF File FDC610PZ PDF File

FDC610PZ
FDC610PZ

Overview
FDC610PZ P-Channel PowerTrench® MOSFET FDC610PZ P-Channel PowerTrench® MOSFET –30V, –4.
9A, 42mΩ Features General Description August 2007 tm „ Max rDS(on) = 42mΩ at VGS = –10V, ID = –4.
9A „ Max rDS(on) = 75mΩ at VGS = –4.
5V, ID = –3.
7A „ Low gate charge (17nC typical).
„ High performance trench technology for extremely low rDS(on).
„ SuperSOTTM –6 package: small footprint (72% smaller than standard SO–8) low profile (1mm thick).
„ RoHS Compliant This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devi...


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