FDB8441

FDB8441 N-Channel PowerTrench® MOSFET August 2006 FDB8441 N-Channel PowerTrench® MOSFET 40V, 80A, 2.5mΩ Features „ Typ rDS(on) = 1.9mΩ at VGS = 10V, ID = 80A „ Typ Qg(10) = 215nC at VGS = 10V „ Low Miller Charge „ Low Qrr Body Diode „ UIS Capability (Single Pulse and Repetitive Pulse) „ Qualified to AEC Q101 „ RoHS Compliant FREE I Applications „ Automotive Engine Control „ Powertrain Management „ Solenoid and Motor Drivers „ Electronic Steering „ Integrated Starter / Alternator „ Distributed Power Architectures and VRMs „ Primary Switch for 12V Systems LE AD ©2006 Fairchild Semiconductor Corporation FDB8441 Rev.A M ENTATIO LE N MP www.DataSheet4U.com 1 www.fairchildsemi.com FDB8441 N-Channel PowerTrench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC < 160oC, VGS = 10V) Pulsed Single Pulse Avalanche Energy Power dissipation Derate above 25oC Operating and Storage Temperature (Note 1) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W) Ratings 40 ±20 80 28 See Figure 4 947 300 2 -55 to 175 mJ W W/oC oC Units V V A Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance Junction to Ambient, 1in2 copper pad area (Note 2) 0.5 62 43 o C/W oC/W oC/W Package Marking and Ordering Information Device Marking FDB8441 Device FDB8441 Package TO-263AB Reel S...