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FDB24AN06LA0

Fairchild Semiconductor

N-Channel PowerTrench MOSFET

FDB24AN06LA0 / FDP24AN06LA0 www.DataSheet4U.com January 2004 FDB24AN06LA0 / FDP24AN06LA0 N-Channel PowerTrench® MOSFE...


Fairchild Semiconductor

FDB24AN06LA0

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FDB24AN06LA0 / FDP24AN06LA0 www.DataSheet4U.com January 2004 FDB24AN06LA0 / FDP24AN06LA0 N-Channel PowerTrench® MOSFET 60V, 36A, 24mΩ Features r DS(ON) = 20mΩ (Typ.), VGS = 5V, ID = 36A Qg(tot) = 16nC (Typ.), VGS = 5V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 Formerly developmental type 83547 Applications Motor / Body Load Control ABS Systems Powertrain Management Injection Systems DC-DC converters and Off-line UPS Distributed Power Architectures and VRMs Primary Switch for 12V and 24V systems DRAIN (FLANGE) GATE DRAIN (FLANGE) SOURCE DRAIN D SOURCE GATE G S TO-263AB FDB SERIES TO-220AB FDP SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 25oC, VGS = 5V) Continuous (TC = 100oC, VGS = 5V) Continuous (TA = 25oC, VGS = 5V, Rθ JA = 43oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 40 36 25 7.8 Figure 4 36 75 0.5 -55 to 175 A A A A A mJ W W/oC o Ratings 60 ±20 Units V V C Thermal Characteristics Rθ JC Rθ JA Rθ JA Thermal Resistance Junction to Case TO-220, TO-263 Thermal Resistance Junction to Ambient TO-220, TO-263 (Note 2) Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 2.0 62 43 oC/W o o C/W C/W This produ...




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