FDA69N25 — N-Channel UniFETTM MOSFET
FDA69N25
N-Channel UniFETTM MOSFET
250 V, 69 A, 41 mΩ Features
• RDS(on) = 34 mΩ (...
FDA69N25 — N-Channel UniFETTM
MOSFET
FDA69N25
N-Channel UniFETTM
MOSFET
250 V, 69 A, 41 mΩ Features
RDS(on) = 34 mΩ (Typ.) @ VGS = 10 V, ID = 34.5 A Low Gate Charge (Typ. 77 nC) Low Crss (Typ. 84 pF)
Applications
PDP TV Uninterruptible Power Supply AC-DC Power Supply
June 2014
Description
UniFETTM
MOSFET is Fairchild Semiconductor’s high
voltage MOSFET family based on planar stripe and DMOS technology. This
MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
D
G
G D S
TO-3PN
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS VDS(Avalanche) ID
IDM VGSS EAS IAR EAR dv/dt PD
Parameter
Drain-Source
Voltage
Repetitive Avalanche
Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
Gate-Source
Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25°C) - Derate above 25°C
(Note 1, 2)
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering, 1/8 from case for 5 seconds
Thermal Characteristics
Symbol RθJC RθJA
Parameter Thermal Resistance, Junction-to-Case, Max. Thermal...