FDA59N25 — N-Channel UniFETTM MOSFET
FDA59N25
N-Channel UniFETTM MOSFET
250 V, 59 A, 49 mΩ
Features
• RDS(on) = 49 mΩ (...
FDA59N25 — N-Channel UniFETTM
MOSFET
FDA59N25
N-Channel UniFETTM
MOSFET
250 V, 59 A, 49 mΩ
Features
RDS(on) = 49 mΩ (Max.) @ VGS = 10 V, ID = 29.5 A Low Gate Charge (Typ. 63 nC) Low Crss (Typ. 70 pF) 100% Avalanche Tested RoHS Compliant
Applications
PDP TV Uninterruptible Power Supply AC-DC Power Supply
April 2014
Description
UniFETTM
MOSFET is Fairchild Semiconductor’s high
voltage MOSFET family based on planar stripe and DMOS technology. This
MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
D
G D S
TO-3PN
G S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
Drain to Source
Voltage
VDS(Avalanche) Repetitive Avalanche
Voltage
VGSS ID
Gate to Source
Voltage Drain Current
- Continuous (TC = 25oC) - Continuous (TC = 100oC)
IDM Drain Current
- Pulsed
EAS Single Pulsed Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
PD Power Dissipation
(TC = 25oC) - Derate Above 25oC
(Note 1,2)
(Note 1) (Note 2) (Note 1) (Note 1) (Note 3)
TJ, TSTG TL
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC RθCS RθJA
Para...