FDA18N50

FDA18N50 — N-Channel UniFETTM MOSFET FDA18N50 N-Channel UniFETTM MOSFET 500 V, 19 A, 265 mΩ Features RDS(on) = 265 mΩ (Max.) @ VGS = 10 V, ID = 9.5 A Low Gate Charge (Typ. 45 nC) Low Crss (Typ. 25 pF) 100% Avalanche Tested Applications PDP TV Uninterruptible Power Supply AC-DC Power Supply June 2014 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D G G D S TO-3PN Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter RθJC RθJA Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Juncti...