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Fairchild Semiconductor
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FCD850N80Z / FCU850N80Z — N-Channel SuperFET® II MOSFET

October 2014

FCD850N80Z / FCU850N80Z
N-Channel SuperFET® II MOSFET

800 V, 6 A, 850 m Features
• Typ. RDS(on) = 710 mTyp.) • Ultra Low Gate Charge (Typ. Qg = 22 nC) • Low Eoss (Typ. 2.3 uJ @ 400V) • Low Effective Output Capacitance (Typ. Coss(eff.) = 106 pF) • 100% Avalanche Tested • RoHS Compliant • ESD Improved Capability

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress.Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop ad

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