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Fairchild Semiconductor
Fairchild Semiconductor


FCU4300N80Z

MOSFET

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FCU4300N80Z — N-Channel SuperFET® II MOSFET

December 2014

FCU4300N80Z
N-Channel SuperFET® II MOSFET

800 V, 1.6 A, 4.3  Features
• RDS(on) = 3.4 Typ.) • Ultra Low Gate Charge (Typ. Qg = 6.8 nC) • Low Eoss (Typ. 0.8 uJ @ 400V) • Low Effective Output Capacitance (Typ. Coss(eff.) = 36 pF) • 100% Avalanche Tested
• RoHS Compliant
• ESD Improved Capability
Applications

Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power 


























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