FCP4N60 600V N-Channel MOSFET
FCP4N60
600V N-Channel MOSFET
Features
• 650V @TJ = 150°C • Typ. RDS(on) = 1.0Ω • Ultra l...
FCP4N60 600V N-Channel
MOSFET
FCP4N60
600V N-Channel
MOSFET
Features
650V @TJ = 150°C Typ. RDS(on) = 1.0Ω Ultra low gate charge (typ. Qg = 12.8nC) Low effective output capacitance (typ. Coss.eff = 32pF) 100% avalanche tested
SuperFET
Description
SuperFETTM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
January 2007
TM
D
G G DS
TO-220
FCP Series
www.DataSheet4U.com
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source
Voltage Drain Current Drain Current Gate-Source
voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
(Note 1)
FCP4N60
600 3.9 2.5 11.7 ± 30 128 3.9 5.0 4.5 50 0.4 -55 to +150 300
Unit
V A A A V mJ A mJ V/ns W W/°C °C °C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Cas...