N-Channel MOSFET
Description
FCD900N60Z — N-Channel SuperFET® II MOSFET
December 2013
FCD900N60Z
N-Channel SuperFET® II MOSFET
600 V, 4.5 A, 900 mΩ Features
650 V @ TJ = 150°C Typ. RDS(on) = 820 mΩ Ultra Low Gate Charge (Typ. Qg = 13 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 49 pF) 100% Avalanche Tested ESD Improved Capacity RoHS Compliant
Description
Supe...
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