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FCB20N60F

Fairchild Semiconductor

N-Channel MOSFET

FCB20N60F 600V NCHANNEL FRFET December 2006 SuperFET FCB20N60F 600V NCHANNEL FRFET Feat ur es • 650V @ TJ = 150° C • T...


Fairchild Semiconductor

FCB20N60F

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FCB20N60F 600V NCHANNEL FRFET December 2006 SuperFET FCB20N60F 600V NCHANNEL FRFET Feat ur es 650V @ TJ = 150° C Ty p.Rds ( on) =0. 15: Fas t Recov eryTy pe (trr = 160ns) Ultra low gate charge ( ty p.Qg=75nC) Low ef f ectiv e output capacitance ( ty p.Cos s . ef f =165pF) 100% av alanche tes ted TM Descr i pt i on SuperFETTM is ,Farichild’ s proprietary ,new generation ofhigh v oltage MOSFET f amily that is utiliz ing an adv anced charge balance mechanis m f or outs tanding low onres is tance and lower gate charge perf ormance. This adv anced technology has been tailored to minimiz e conduction los s ,prov ide s uperior s witching perf ormance,and withs tand ex treme dv / dt rate and higher av alanche energy . Cons equently , SuperFET is v ery s uitable f or v arious AC/ DC power conv ers ion in s witching mode operation f or s y s tem miniaturiz ation and higher ef f iciency . D D G G S www.DataSheet4U.com S Absol ut e Maxi m um Rat i ngs Sym bol VDSS ID IDM VGSS EAS IAR EAR dv / dt PD TJ,TSTG TL DrainSource Voltage Drain Current Drain Current GateSource v oltage Single Puls ed Av alanche Energy Av alanche Current Repetitiv e Av alanche Energy PeakDiode Recov erydv / dt Power Dis s ipation ( TC = 25qC) -Derate abov e 25qC ( Note 2) ( Note 1 ) ( Note 1 ) ( Note 3 ) Par am et er -Continuous( TC = 25qC) -Continuous( TC = 100qC) -Puls ed ( Note 1 ) FCB20N60F 600 20 12. 5 60 r 30 690 20 20. 8 50 208 1. 67 55 to +150 300 Uni t V A A A V mJ A mJ V/ ns W W...




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