FBE22-06N1

Advanced Technical Information Fast Single Phase Rectifier Bridge in ISOPLUS i4-PACTM FBE 22-06N1 VRRM = 600 V ID(AV)M = 20 A trr = 80 ns 1 5 www.DataSheet4U.com Input Rectifier Bridge Symbol VRRM IFAV ID(AV)M IFSM EAS Ptot TC = 90°C; sine 180° (per diode) TC = 90°C TVJ = 25°C; t = 10 ms; sine 50 Hz IAS= 0.9 A; LAS=180 µH; TC = 25°C; non repetitive TC = 25°C (per diode) Conditions Maximum Ratings 600 10 20 40 0.1 35 V A A A mJ W Features HiPerFREDTM Epitaxial Diodes - fast and soft reverse recovery – low switching losses - avalanche rated - low leakage current ISOPLUS i4-PACTM package - isolated back surface - enlarged creepage towards heatsink - application friendly pinout - high reliability - industry standard outline Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.0 1.5 0.1 11 80 2.2 0.06 V V mA mA A ns 3.5 K/W Applications high frequency rectifiers, output rectifiers of switched mode power supplies single phase mains rectifiers with minimized electromagnetic emissions power factor correction in conjunction with boost chopper (FID.../FMD... type) VF IR IRM trr RthJC IF = 15 A; TVJ = 25°C TVJ = 125°C VR = VRRM; TVJ = 25°C TVJ = 125°C IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C VR = 300 V (per diode) Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved 1-2 030 FBE 22-06...