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PD - 94002
IRF7751
HEXFET® Power MOSFET
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Ultra Low On-Resistance Dual P-Channel MOSFET V...
www.DataSheet4U.com
PD - 94002
IRF7751
HEXFET® Power
MOSFET
l l l l l
Ultra Low On-Resistance Dual P-Channel
MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel
VDSS
-30V
RDS(on) max
35mΩ@VGS = -10V 55mΩ@VGS = -4.5V
ID
-4.5A -3.8A
Description
HEXFET® power
MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the de1 2 3 4 1= 2= 3= 4= D1 S1 S1 G1 8= 7= 6= 5= 8 7 6 5 D2 S2 S2 G2
signer with an extremely efficient and reliable device for use in battery and load management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards.
TSSOP-8
Absolute Maximum Ratings
Parameter
VDS ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C PD @TC = 70°C VGS TJ, TSTG Drain-Source
Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source
Voltage Junction and Storage Temperature Range
Max.
-30 -4.5 -3.6 -18 1.0 0.64 0.008 ±20 -55 to +150
Units
V A
W W/°C V °C
Thermal Resistance
Parameter
RθJA Maximum...