F29C51001T

SyncMOS F29C51001T/F29C51001B 1 MEGABIT (131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Features s 128Kx8-bit Organization s Address Access Time: 45, 70, 90 ns s Single 5V ± 10% Power Supply s Sector Erase Mode Operation s 8KB Boot Block (lockable) s 512 bytes per Sector, 256 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Program Cycle Time: 20µs (Max) s Minimum 10,000 Erase-Program Cycles s Low power dissipation – Active Read Current: 20mA (Typ) – Active Program Current: 30mA (Typ) – Standby Current: 100µA (Max) s Hardware Data Protection s Low VCC Program Inhibit Below 3.2V s Self-timed program/erase operations with endof-cycle detection – DATA Polling – Toggle Bit s CMOS and TTL Interface s Available in two versions – F29C51001T (Top Boot Block) – F29C51001B (Bottom Boot Block) s Packages: – 32-pin Plastic DIP – 32-pin TSOP-I – 32-pin PLCC Description The F29C51001T/F29C51001B is a high speed 131,072 x 8 bit CMOS flash memory. Programming or erasing th...