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F10N65 Datasheet

Part Number F10N65
Manufacturers Pan Jit International
Logo Pan Jit International
Description 650V N-Channel Enhancement Mode MOSFET
Datasheet F10N65 DatasheetF10N65 Datasheet (PDF)

PJP10N65 / PJF10N65 650V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A TO-220AB / ITO-220AB TO-220AB • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In compliance with EU RoHs 2002/95/EC Directives 3 2 S 1D G ITO-220AB 1 2 3 D S G MECHANICAL DATA • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MI.

  F10N65   F10N65






Part Number F10N60
Manufacturers ROUM
Logo ROUM
Description 10A 600V N-channel Enhancement Mode Power MOSFET
Datasheet F10N65 DatasheetF10N60 Datasheet (PDF)

10A 600V N-channel Enhancement Mode Power MOSFET F10N60 1 Description These silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. G 1 2 Features ● Fast Switching ● Low ON Resistance(Rdson≤0.9Ω) ● Low Gate Charge(Typical Data:32nC) ● Low Reverse Transfer Capacitances(Typical:7.5pF) ● 100% Single Pulse Avalanche Energy Test ● .

  F10N65   F10N65







Part Number F10N60
Manufacturers Pan Jit International
Logo Pan Jit International
Description 600V N-Channel Enhancement Mode MOSFET
Datasheet F10N65 DatasheetF10N60 Datasheet (PDF)

PJP10N60 / PJF10N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 600V, R DS(ON)=1.0Ω@VGS=10V, ID=5.0A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 1 2 G 3 D S 1 2 G 3 S D MECHANICAL DATA • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL.

  F10N65   F10N65







650V N-Channel Enhancement Mode MOSFET

PJP10N65 / PJF10N65 650V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 650V, RDS(ON)=1.0Ω@VGS=10V, ID=5.0A TO-220AB / ITO-220AB TO-220AB • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In compliance with EU RoHs 2002/95/EC Directives 3 2 S 1D G ITO-220AB 1 2 3 D S G MECHANICAL DATA • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 INTERNAL SCHEMATIC DIAGRAM 2 Drain ORDERING INFORMATION TYPE PJP10N65 MARKING P10N65 PJF10N65 F10N65 PACKAGE TO-220AB ITO-220AB PACKING 50PCS/TUBE 50PCS/TUBE 1 Gate 3 Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PARAMETER Symbol PJP10N65 PJF10N65 Drain-Source Voltage VDS 650 Gate-Source Voltage VGS +30 Continuous Drain Current ID 10 10 Pulsed Drain Current 1) Maximum Power Dissipation Derating Factor TA= 2 5 OC IDM PD 40 156 1.25 40 50 0.4 Op e ra ti ng Junc ti o n a nd S to r a g e Te mp e ra tur e Ra ng e Avalanche Energy with Single Pulse IAS=10A, VDD=90V, L=13mΗ Junction-to-Case Thermal Resistance TJ,TSTG E AS RθJC -55 to +150 750 0.8 2.5 Junction-to Ambient Thermal Resistance Note : 1. Maximum DC current limited by the package RθJA 62.5 100 Uni ts V V A A W OC mJ OC /W OC /W PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-DEC.25.2009 .


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