DatasheetsPDF.com

F1006 Datasheet

Part Number F1006
Manufacturers Polyfet RF Devices
Logo Polyfet RF Devices
Description RF POWER VDMOS TRANSISTOR
Datasheet F1006 DatasheetF1006 Datasheet (PDF)

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1006 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 120 Watts Single Ended Pac.

  F1006   F1006






Part Number F1008
Manufacturers Polyfet RF Devices
Logo Polyfet RF Devices
Description RF POWER VDMOS TRANSISTOR
Datasheet F1006 DatasheetF1008 Datasheet (PDF)

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1008 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 40 Watts Gemini Package St.

  F1006   F1006







Part Number F1007
Manufacturers Polyfet RF Devices
Logo Polyfet RF Devices
Description RF POWER VDMOS TRANSISTOR
Datasheet F1006 DatasheetF1007 Datasheet (PDF)

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1007 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 20 Watts Gemini Package St.

  F1006   F1006







Part Number F1005
Manufacturers Polyfet RF Devices
Logo Polyfet RF Devices
Description RF POWER VDMOS TRANSISTOR
Datasheet F1006 DatasheetF1005 Datasheet (PDF)

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1005 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 80 Watts Single Ended Pack.

  F1006   F1006







Part Number F1004
Manufacturers Polyfet RF Devices
Logo Polyfet RF Devices
Description RF POWER VDMOS TRANSISTOR
Datasheet F1006 DatasheetF1004 Datasheet (PDF)

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1004 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 80 Watts Single Ended Pack.

  F1006   F1006







RF POWER VDMOS TRANSISTOR

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1006 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 120 Watts Single Ended Package Style AV HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 250 Watts Junction to Case Thermal Resistance 0.7 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 30V o -65 o C to 150o C 12 A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Power Gai Drain Efficiency Load Mismatch Toleranc MIN 13 60 TYP 120WATTS OUTPUT ) MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 1.2 A, Vds = 28.0 V, F = 175 MHz Idq = 1.2 A, Vds = 28.0 V, F = 175 MHz Idq = 1.2 A, Vds = 28.0 V, F = 175 MHz η VSWR ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltag Zero Bias Drain Curren Gate Leakage Curren Gate Bias for Drain Curren Forward Transconductanc Saturation Resistanc Saturation Curren Common Source Input Capacitanc Common Source Feedback Capacitan.


2005-03-30 : M27C320    M27C322    M27C400    M27C405    M27C512    2SD600    2SD600K    2SD601A    2SD602    2SD602A   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)