FFPF08H60S — Hyperfast II Diode
November 2014
FFPF08H60S 8 A, 600 V, Hyperfast II Diode
Features
• Hyperfast Recovery...
FFPF08H60S — Hyperfast II Diode
November 2014
FFPF08H60S 8 A, 600 V, Hyperfast II Diode
Features
Hyperfast Recovery trr = 45 ns (@ IF = 8 A) Max Forward
Voltage, VF = 2.6 V (@ TC = 25°C) 600 V Reverse
Voltage and High Reliability Avalanche Energy Rated RoHS Compliant
Applications
General Purpose Switching Mode Power Supply Free-Wheeling Diode for Motor Application Power Switching Circuits
Description
The FFPF08H60S is a hyperfast II diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/ clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
Pin Assignments
TO-220F-2L 1. Cathode 2. Anode
1 1. Cathode
2 2. Anode
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VRRM VRWM VR IF(AV) IFSM
TJ, TSTG
Parameter
Peak Repetitive Reverse
Voltage
Working Peak Reverse
Voltage
DC Blocking
Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave
@ TC = 105 °C
Operating Junction and Storage Temperature
Ratings
600 600 600
8 60
- 65 to +175
Unit
V V V A A
°C
Thermal Characteristics TC = 25°C unless otherwise...