ESDA8V2-1J
EOS and ESD Transil™ protection for charger and battery port
Features
■ Breakdown voltage VBR = 8.2 V ■ Unid...
ESDA8V2-1J
EOS and ESD Transil™ protection for charger and battery port
Features
■ Breakdown
voltage VBR = 8.2 V ■ Unidirectional device ■ High peak power dissipation: 500 W
(8/20 µs waveform) ■ ESD protection level better than
IEC 61000-4-2, level 4: 30 kV contact discharge ■ Low leakage current (< 0.5 µA @ 5 V)
Benefits
■ High EOS and ESD protection level ■ High integration ■ Suitable for high density boards
Complies with the following standards:
■ IEC 61000-4-2 level 4 – ±15 kV (air discharge) – ±8 kV (contact discharge)
■ MIL STD 883G - Method 3015-7: class 3B – HBM (human body model): ≥8kV
Applications
This product is particularly recommended for the protection of power supply lines of portable devices, where EOS and ESD transient over
voltage protection in sensitive equipment is required, such as: ■ Computers ■ Printers ■ Communication systems ■ Cellular phone handsets and accessories ■ Video equipment
A K
SOD-323
Figure 1. Functional diagram (top view)
Description
The ESDA8V2-1J is a unidirectional single line Transil diode designed specifically for the protection of integrated circuits in portable equipment and miniaturized electonic devices subject to EOS and ESD transient over
voltages.
TM: Transil is a trademark of STMicroelectronics
August 2009
Doc ID 15646 Rev 1
1/7
www.st.com
7
Characteristics
1
Characteristics
ESDA8V2-1J
Table 1. Absolute maximum ratings (Tamb = 25 °C)
Symbol
Parameter
Value
ESD discharge:
IEC 61000-4-2 air discharge on input pin...