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EMZ6.8JA

Rohm

Zener diode

EMZ6.8JA Diodes Zener diode EMZ6.8JA zApplications Voltage regulation (Common anode dual chips) zDimensions (Unit : mm)...


Rohm

EMZ6.8JA

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Description
EMZ6.8JA Diodes Zener diode EMZ6.8JA zApplications Voltage regulation (Common anode dual chips) zDimensions (Unit : mm) 1.6±0.1 0.22±0.05 zLand size figure (Unit : mm) 0.4 0.45 0.15 0.25 0.25 0.15 0.3 0.13±0.05 1.2±0.1 1.6±0.1 zFeatures 1) Ultra small mold type. (TEMD5) 2) High reliability. (5) (4) 0~0.1 0.5 (1) (2) (3) 0.5 EMD5 0.45 max zConstruction Silicon epitaxial planar 0.5 0.5 1.0±0.1 zStructure ROHM : TEMD5 dot (year week factory) zTaping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.5±0.1       0 1.75±0.1 0.3±0.1 3.5±0.05 1.65±0.1 5.5±0.2 8.0±0.2 1.65±0.1 1PIN 4.0±0.1 φ0.8±0.1 0~0.1 0.65±0.1 zAbsolute maximum ratings (Ta=25°C) Parameter Power dissipation (*1) Junction temperature Storage temperature (*1) Total four elements Symbol P Tj Tstg Limits 150 150 -55 to +150 Unit mW ℃ ℃ zElectrical characteristics (Ta=25°C) Parameter Symbol Zener voltage Reverse current VZ IR Min. 6.47 - Typ. - Max. 7.14 0.50 Unit V µA Conditions IZ=5mA VR=3.5V ∗ Zener voltage (Vz) shall be measured at 40ms after loading current. 1/2 1.65±0.01 1.55 EMZ6.8JA Diodes zElectrical characteristic curves (Ta=25°C) 10 Ta=75℃ 1 Ta=25℃ Ta=-25℃ 0.1 Ta=125℃ Ta=150℃ 100 10 1 0.1 0.01 0.001 Ta=-25℃ Ta=75℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=150℃ Ta=125℃ 100 f=1MHz REVERSE CURRENT:IR (nA) ZENER CURRENT:Iz(mA) Ta=25℃ 10 0.0001 1 0 1 2 3 4 0 1 2 3 4 5 6 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 0.01 6 6.5 7 7.5 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS...




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