EMZ1DXV6T1, EMZ1DXV6T5 Product Preview Dual General Purpose Transistors
NPN/PNP Dual (Complimentary)
This transistor is ...
EMZ1DXV6T1, EMZ1DXV6T5 Product Preview Dual General Purpose Transistors
NPN/PNP Dual (Complimentary)
This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications.
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http://onsemi.com
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Lead−Free Solder Plating Low VCE(SAT), t0.5 V
MAXIMUM RATINGS
Rating Collector −Emitter
Voltage Collector −Base
Voltage Emitter −Base
Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Value −60 −50 −6.0 −100 Unit V V V mAdc
Q1
Q2
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6
54 3 12
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Range 1. FR−4 @ Minimum Pad. RqJA TJ, Tstg TA = 25°C RqJA TA = 25°C Symbol PD Max 357 (Note 1) 2.9 (Note 1) 350 (Note 1) Max 500 (Note 1) 4.0 (Note 1) 250 (Note 1) −55 to +150 Unit mW mW/°C
SOT−563 CASE 463A PLASTIC
MARKING DIAGRAM
3Z D °C/W 3Z = Specific Device Code D = Date Code Unit mW mW/°C °C/W °C EMZ1DXV6T5 SOT−563
Symbol PD
ORDERING INFORMATION
Device EMZ1DXV6T1 Package SOT−563 Shipping† 4 mm Pitch 4000/Tape & Reel 2 mm Pitch 8000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD801...
