EMF5XV6T5

www.DataSheet4U.com EMF5XV6T5 Preferred Devices Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Features http://onsemi.com (3) (2) (1) Simplifies Circuit Design Reduces Board Space Reduces Component Count These are Pb−Free Devices Q1 Q2 R2 Symbol Value Unit (4) Vdc Vdc mAdc 6 1 R1 (5) (6) MAXIMUM RATINGS Rating Q1 (TA = 25°C unless otherwise noted, common for Q1 and Q2) Collector-Base Voltage Collector-Emitter Voltage Collector Current Electrostatic Discharge Q2 (TA = 25°C) Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current − Peak Collector Current − Continuous Electrostatic Discharge VCEO VCBO VEBO IC ESD −12 −15 −6.0 −1.0 (Note 1) −0.5 Vdc Vdc Vdc Adc VCBO VCEO IC ESD 50 50 100 HBM Class 1 MM Class B SOT−563 CASE 463A PLASTIC MARKING DIAGRAM HBM Class 3B MM Class C UY M G G THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Range 1 Symbol PD 357 (Note 2) 2.9 (Note 2) RqJA 350 (Note 2) mW mW/°C °C/W Max Unit UY = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) Symbol PD Max 500 (Note 2) 4.0 (Note 2) Unit mW mW/°C °C/W ORDERING INFORMATION Dev...