Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
20V
RDSON (MAX.) ...
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
20V
RDSON (MAX.)
20mΩ
ID 6A
UIS 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMF20A02V
LIMITS
UNIT
Gate‐Source
Voltage
VGS
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 100 °C
ID IDM
Avalanche Current
IAS
Avalanche Energy Repetitive Avalanche Energy2
L = 0.1mH, ID=10A, RG=25Ω
L = 0.05mH
EAS EAR
Power Dissipation
TA = 25 °C TA = 100 °C
Operating Junction & Storage Temperature Range
PD Tj, Tstg
100% UIS testing in condition of VD=10V, L=0.1mH, VG=4.5V, IL=6A, Rated VDS=20V N‐CH THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
±12 6 4 24 10 5 2.5...