N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
500V
D
RDSON (MAX.)
...
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
500V
D
RDSON (MAX.)
1.3Ω
ID 7A
G
UIS, 100% Tested
S
Pb‐Free Lead Plating
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source
Voltage
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
Avalanche Current
Avalanche Energy Repetitive Avalanche Energy2
L = 3mH, ID=7A, RG=25Ω L = 0.5mH
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
VGS ID
IDM IAS EAS EAR PD
Tj, Tstg
EMD07N50F
LIMITS ±30 7 4.3 28 7 73 12 48 19
‐55 to 150
UNIT V A
mJ W °C
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse ...