N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
RDSON (MAX.)
500mΩ
ID 1.5A
UIS 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 100 °C
VGS ID IDM
Power Dissipation
TA = 25 °C TA = 100 °C
Operating Junction & Storage Temperature R.
MOSFET
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
RDSON (MAX.)
500mΩ
ID 1.5A
UIS 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 100 °C
VGS ID IDM
Power Dissipation
TA = 25 °C TA = 100 °C
Operating Junction & Storage Temperature Range
PD Tj, Tstg
EMBE0A10G
LIMITS ±20 1.5 0.9 6
2 0.8 ‐55 to 150
UNIT V
A
W °C
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature. 2Duty cycle 1% 362.5°C / W when mounted on a 1 in2 pad of 2 oz co.