EMB53
Complex Digital Transistors (Bias Resistor Built-in Transistors)
Datasheet
l Outline
Parameter VCEO IC R1
DTr1...
EMB53
Complex Digital Transistors (Bias Resistor Built-in Transistors)
Datasheet
l Outline
Parameter VCEO IC R1
DTr1 and DTr2 -50V -100mA 4.7kΩ
EMT6
EMB53 (SC-107C)
l Features 1) Two DTA043T chips in a EMT6 package. 2) Transister elements are independent, eliminating interface. 3) Mounting cost and area can be cut in half. 4) Lead Free/RoHS Compliant.
l Inner circuit
l Application Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
l Packaging specifications
Part No. EMB53
Package EMT6
Package size 1616
Taping code T2R
Reel size Tape width (mm) (mm) 180
Basic ordering unit.(pcs) 8000
Marking B53
8
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EMB53
Datasheet
l Absolute maximum ratings (Ta = 25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO IC PD*1 *2 Tj Tstg Values -50 -50 -5 -100 150 150 -55 to +150 Unit V V V mA mW
℃ ℃
l Electrical characteristics (Ta = 25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collec...