Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
RDSON (MAX.) ...
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
RDSON (MAX.)
21mΩ
ID 7.5A
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB21A03G
LIMITS
UNIT
Gate‐Source
Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 100 °C
ID IDM
7.5 5.5 30
Avalanche Current
IAS 10
Avalanche Energy Repetitive Avalanche Energy2
L = 0.1mH, ID=7.5A, RG=25Ω
L = 0.05mH
EAS EAR
2.8 1.4
Power Dissipation
TA = 25 °C TA = 100 °C
Operating Junction & Storage Temperature Range
PD Tj, Tstg
2 0.8 ‐55 to 150
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=7.5A, Rated VDS=30V N‐CH THERMAL RESISTANCE RATINGS...
