EMB07N04H

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 40V D RDSON (MAX.) 7mΩ ID 55A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=50A, RG=25Ω L = 0.05mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS EAR PD Tj, Tstg THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RJC Junction‐to‐Ambient RJA 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ TYPICAL EMB07N04H LIMITS ±20 55 40 150 50 125 62.5 50 20 ‐55 to 150 UNIT V A mJ W °C MAXIMUM 2.5 50 UNIT °C / W 2015/5/6 p.1 EMB07N04H ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs STATIC VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±20V VDS = 32V, VGS = 0V VDS = 30V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V VGS = 10V, ID = 24A VGS = 4.5V, ID = 16A VDS = 5V, ID = 24A ...