N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
S2 S2 S2 G2
N‐CH‐Q1 N‐CH‐Q2
...
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
S2 S2 S2 G2
N‐CH‐Q1 N‐CH‐Q2
BVDSS
30V
RDSON (MAX.) 9.5mΩ
30V 6.5mΩ
D2 / S1
ID 15A 22A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free
D1 D1 D1 D1 PIN 1
(G1)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB06K03HP
LIMITS
UNIT
Q1 Q2
Gate‐Source
Voltage
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, RG=25Ω
Repetitive Avalanche Energy2
L = 0.05mH
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS ID
IDM IAS EAS EAR PD
Tj, Tstg
±20 ±20
15 22
12 16
60 88
15...
