N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH‐Q1 N‐CH‐Q2 BVDSS 30V 30V ...
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N‐CH‐Q1 N‐CH‐Q2 BVDSS 30V 30V RDSON (MAX.) 5.0mΩ 2.0mΩ ID 53A 95A UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source
Voltage
Continuous Drain Current3 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
Continuous Drain Current3 Avalanche Current
TA = 25 °C TA = 70 °C
Avalanche Energy Repetitive Avalanche Energy2
L = 0.1mH, RG=25Ω L = 0.05mH
Power Dissipation
TC = 25 °C TC = 100 °C
Power Dissipation
TA = 25 °C TA = 70 °C
Operating Junction & Storage Temperature Range
2016/4/28
VGS ID
IDM ID
IAS EAS EAR PD
PD Tj, Tstg
EMB02Q03HP
LIMITS Q1 Q2 ±20 ±20 53...