EM6K1

EM6K1 Transistor Small switching (30V, 0.1A) EM6K1 !Features 1) Two 2SK3019 transistors in a single EMT package. 2) The MOSFET elements are independent, eliminating interference. 3) Mounting cost and area can be cut in half. 4) Low on-resistance. 5) Low voltage drive (2.5V) makes this device ideal for portable equipment. !External dimensions (Units : mm) EMT6 0.22 (4) (5) (6) (3) (2) 1.2 1.6 (1) 0.13 Each lead has same dimensions Abbreviated symbol : K1 !Applications Interfacing, switching (30V, 100mA) !Equivalent circuit !Structure Silicon N-channel MOSFET (6) (5) Gate Protection Diode ∗ (4) Tr1 !Packaging specifications Package Code Type EM6K1 Basic ordering unit (pieces) Taping T2R 8000 (1) ∗ Gate Protection Diode Tr2 (1)Tr1 (2)Tr1 (3)Tr2 (4)Tr2 (5)Tr2 (6)Tr1 Source Gate Drain Source Gate Drain (2) 0.5 (3) ∗ A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when rated voltages are exceeded. !Absolute maximum ratings (Ta=25°C) Parameter Drain−source voltage Gate−source voltage Drain current Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IDR IDRP PD ∗1 ∗2 Limits 30 ±20 100 400 100 400 150 150 −55~+150 Unit V V mA mA mA mA mW/TOTAL 120mW/1ELEMENT °C °C Reverse drain current Total power dissipation (Tc=25°C) Channel temperature Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 With each pin mounted on the recommended lands. Tch Tstg ...