Infrared Emitting Diodes(GaAs)
K O D E N S H I
EL-314
DIMENSIONS
The EL-314 a high-power GaAs IRED mounted in a clear ...
Infrared Emitting Diodes(GaAs)
K O D E N S H I
EL-314
DIMENSIONS
The EL-314 a high-power GaAs IRED mounted in a clear sidelooking package, is compact, low profile, and easy to mount.
(Unit : mm)
FEATURES
¶U Compact ¶ULow profile package ¶U Low-cost ¶USidelooking plastic package
APPLICATIONS
¶U Photointerrupters ¶UOptical switches ¶U Toys
MAXIMUM RATINGS
Item
Reverse
voltage Forward current *1 Pulse forward current Power dissipation Operating temp. Storage temp. *2 Soldering temp.
(Ta=2°…) 5
Symbol
VR F I FP I PD Topr. Tstg. Tsol.
Rating
5 50 0.5 75 -25~+85 -30~+100 240
Unit
V mA A mW °… °… °…
*1. pulse width £∫tw ßZ100 sec.period Ï £∫ T=10msec. *2. For MAX.5 seconds at the position of 2 mm from the package
ELECTRO-OPTICAL CHARACTERISTICS
Item
Forward
voltage Reverse current Capacitance Radiant intensity Peak emission wavelength Spectral bandwidth 50% Half angle
(Ta=2° 5…)
Symbol
VF R I Ct PO Îp ƒÎ °‚Ë
Conditions
F=50mA I VR=5V f=1MHz F=50mA I F=50mA I F=50mA I
Min.
Typ.
25 0.7 940 50 °æ 30
Max.
1.6 10
Unit.
V Ï A pF mW/sr nm nm deg.
- 1-
Infrared Emitting Diodes(GaAs)
EL-314
Power dissipation Vs. Ambient temperature
Radiant intensity Vs. Forward current
Relative radiant intensity Vs. Ambient temperature
Relative intensity Vs. Wavelength
Forward current vs. Forward
voltage
Radiant Pattern
Relative radiant intensity Vs. Distance
- 2-
...