Infrared Emitting Diodes(GaAs)
K O D E N S H I
EL-313
DIMENSIONS
The EL-313 is a high-power GaAs IRED mounted in a cle...
Infrared Emitting Diodes(GaAs)
K O D E N S H I
EL-313
DIMENSIONS
The EL-313 is a high-power GaAs IRED mounted in a clear side-viewing package. This IRED is both compact and easy to mount.
(Unit : mm)
FEATURES
¶UCompact plastic mold type
APPLICATIONS
¶UOptical switches ¶UTransmission sensors
MAXIMUM RATINGS
Item
Reverse
voltage Forward current Power dissipation *1 Pulse forward current Operating temp. Storage temp. *2 Soldering temp.
(Ta=2°…) 5
Symbol
VR F I PD FP I Topr. Tstg. Tsol.
Rating
4 50 100 1 £≠ 20 °≠£´ 85 £≠ 30 °≠£´ 85 240
Unit
V mA mW A °… °… °…
*1. pulse width £∫tw ßZ100 sec.period Ï £∫ T=10msec *2. For MAX.5 seconds at the position of 2 mm from the package
ELECTRO-OPTICAL CHARACTERISTICS
Item
Forward
voltage Reverse current Peak emission wavelength Radiant intensity *3 Half angle
Tr *3. Exclusive P is used as detector
(Ta=2° 5…)
Symbol
VF R I Îp PO ƒË
Conditions
F=30mA I VR=4V F=20mA I F=30mA I
Min.
Typ.
1.2 940 2.0 °æ 20
Max.
1.5 10
Unit.
V Ï A nm mW deg.
- 1-
Infrared Emitting Diodes(GaAs)
EL-313
Power dissipation Vs. Ambient temperature
Radiant intensity Vs. Forward current
Relative radiant intensity Vs. Ambient temperature
Relative intensity Vs. Wavelength
Forward current vs. Forward
voltage
Radiant Pattern
Relative radiant intensity Vs. Distance
- 2-
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