www.DataSheet4U.com
WTE
POWER SEMICONDUCTORS
EFS1J
Pb
1.0A LOW VF SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE
Fe...
www.DataSheet4U.com
WTE
POWER SEMICONDUCTORS
EFS1J
Pb
1.0A LOW VF SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE
Features
! ! ! ! ! ! ! Glass Passivated Die Construction Ideally Suited for Automatic Assembly B Low Forward
Voltage Drop, High Efficiency Surge Overload Rating to 30A Peak Low Power Loss A Super-Fast Recovery Time F Plastic Case Material has UL Flammability Classification Rating 94V-O C H G E
SMA/DO-214AC Dim Min Max 2.50 2.90 A 4.00 4.60 B 1.20 1.60 C 0.152 0.305 D 4.80 5.28 E 2.00 2.44 F 0.051 0.203 G 0.76 1.52 H All Dimensions in mm
D
Mechanical Data
! ! ! ! ! ! Case: SMA/DO-214AC, Molded Plastic Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 Polarity: Cathode Band or Cathode Notch Marking: Type Number Weight: 0.064 grams (approx.) Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4
Maximum Ratings and Electrical Characteristics
Characteristic Peak Repetitive Reverse
Voltage Working Peak Reverse
Voltage DC Blocking
Voltage RMS Reverse
Voltage Average Rectified Output Current @TL = 75°C Symbol VRRM VRWM VR VR(RMS) IO
@TA=25°C unless otherwise specified
EFS1J
Unit
600 420 1.0
V V A
Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward
Voltage Peak Reverse Current At Rated DC Blocking
Voltage Reverse Recovery Time (Note 1) Typical Junction Capacitance...